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GaN epitaxial growth thermometric UV400/UVR400

Product name

GaN epitaxial growth thermometry

Model number

UV400/UVR400

GaN epitaxial growth thermometry UV400/UVR400 enables the thermometry of GaN buffer layer growth and MQW growth.

Usage

- GaN film thermometry
- Reflectometry

Features

- Thermometry of GaN epitaxial layers grown on sapphire wafer.
- Use UV beam (400nm) instead of wafer pocket temperature measurement in conventional NIR measurement to measure the temperature of GaN.
- GaN buffer layer growth and MQW growth can be thermometrized.
- High-temperature accuracy allows you to control LED emission wavelength.
- It uses a highly sensitive PMT (photomultiplier tube), so it maintains good S/N and stabilities.
- No optical interferences found in NIR measuring.
- Measuring duration: Select from 8msec/20msec/100msec
- Distance to the measuring surface: 73mm fixed
- Digital (RS485) and analog-output

Specifications

Temperature range	UV400	650 ～ 1150°C
	UVR400	Temperature: 650 ～ 1150°C
	UVR400	Reflectometry: 0.000 ～ 1.000
Detection wavelength	UV400	Center wave length: 400nm
	UV400	FWHM: 50nm
	UVR400	Temperature/Center Wavelength: 400nm half-width: 50nm
	UVR400	Reflectometry/Center Wavelength: 635nm half-width: 2nm (or 10%)

Basic system configuration diagram

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