Products

GaN epitaxial growth thermometric UV400/UVR400

Product name

GaN epitaxial growth thermometry

 

Model number

UV400/UVR400

 

GaN epitaxial growth thermometry UV400/UVR400 enables the thermometry of GaN buffer layer growth and MQW growth.

Usage

  • GaN film thermometry
  • Reflectometry

Features

  • Thermometry of GaN epitaxial layers grown on sapphire wafer.
  • Use UV beam (400nm) instead of wafer pocket temperature measurement in conventional NIR measurement to measure the temperature of GaN.
  • GaN buffer layer growth and MQW growth can be thermometrized.
  • High-temperature accuracy allows you to control LED emission wavelength.
  • It uses a highly sensitive PMT (photomultiplier tube), so it maintains good S/N and stabilities.
  • No optical interferences found in NIR measuring.
  • Measuring duration: Select from 8msec/20msec/100msec
  • Distance to the measuring surface: 73mm fixed
  • Digital (RS485) and analog-output

Specifications

Temperature range UV400 650 ～ 1150°C
UVR400 Temperature: 650 ～ 1150°C
Reflectometry: 0.000 ～ 1.000
Detection wavelength UV400 Center wave length: 400nm
FWHM: 50nm
UVR400 Temperature/Center Wavelength: 400nm half-width: 50nm
Reflectometry/Center Wavelength: 635nm half-width: 2nm (or 10%)

Basic system configuration diagram

 

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List of Radiation thermometer and thermal image